该器件降低功率器件静态功耗和射频器件噪声，满足低能耗功率器件和低噪声射频器件的应用需求。

成果发表：

Wang X, Lind Z Y, Zhang Y M, et al. Different reverse leakage current transport mechanisms of planar Schottky barrier diodes (SBDs) on sapphire and GaN substrate[J]. Results in Physics, 2023, 53: 106933.