该技术解决了当前面向低电流密度工况下，新型显示的技术难题，并提供了新的方案。

成果发表：

Wang G, Huang J, Wang Y, et al. Growth and characterization of micro-LED based on GaN substrate[J]. Optics Express, 2024, 32(18): 31463-31472.

Y. Liu et al., "Low Dislocation Density Homoepitaxy Ultraviolet-A Micro-LEDs Scale Down to 3 μm," in IEEE Electron Device Letters, vol. 45, no. 4, pp. 641-644, April 2024, doi: 10.1109/LED.2024.3368513.